品牌
其他厂商性质
深圳市所在地
特征Features
响应时间快(Fast response times)
高光敏性(High photo sensitivity)
小结电容(Small junction capacitance)
替代传统CDS光敏电阻,不含镉、铅等有害物质,符合欧盟ROHS标准(Instead of the traditional CDS photosensitive resistance, contain cadmium, lead and hazardous substances, ROHS compliant)。用于光控类产品,控制昼夜切换(For optical control products, control day and night switching)。
额定值AbsoluteMaximumRatings (Ta= 25℃)
参数 Parameter | 符号 Symbol | 额定值 Rating | 单位 Units |
工作电压 Supply input Voltage | VCC | 12 | V |
工作环境温度 Operating Temperature | Topr | -25~+85 | ℃ |
储存环境温度 Storage Temperature | Tstg | -40~+100 | ℃ |
焊接温度 Lead Soldering Temperature | Tsol | 260 | ℃ |
25℃或低于 25℃环境下功耗Power Dissipation at(or below)25℃ Free Air Temperature | PC | 70 | mW |
光电特性Electro-Optical characteristics(Ta=25℃)
参数 Parameter | 符号Symbol | 条件Condition | 最小值Min. | 中间值Typ. | 值Max. | 单位Units |
集电极发射极击穿电压Collector-Emitter Breakdown Voltage | BVCEO | Ic=100μA Ee=0mW/cm2 | 30 | --- | 70 | V |
发射极集电极击穿电压Emitter-Collector Breakdown Voltage | VECO | IE=100μA Ee=0mW/cm2 | 5 | --- | --- | V |
集电极发射极饱和电压Collector-Emitter Saturation Voltage | VCE(sta) | Ic=2mA Ee=1mW/cm2 | --- | --- | 0.4 | V |
启动延时Rise time | Tr | VCE=5V Ic=1mA RL=1000Ω | --- | 15 | --- | μS |
关闭延时Fall Time | Tf | --- | 15 | --- | ||
暗电流Collector Dark Current | ICEO | Ev=0mW/cm2 VCE=20V | --- | --- | 100 | nA |
亮电流On StatCollector Current | IC(on) | Ev=10lux 590nmVCE=5v | 7 | --- | 8 | uA |
接收峰值光谱 Wavelength of Peak Sensitivity | λρ | --- | 400 | 850 | 1100 | nm |